Print Page
PD20010-E
RF FET Transistor, 40 V, 5 A, 59 W, 2 GHz, PowerSO-10RF
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD20010-E
Order Code2807337
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id5A
Power Dissipation59W
Operating Frequency Min-
Operating Frequency Max2GHz
Transistor Case StylePowerSO-10RF
No. of Pins3Pins
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (17-Dec-2015)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
59W
Operating Frequency Max
2GHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Continuous Drain Current Id
5A
Operating Frequency Min
-
Transistor Case Style
PowerSO-10RF
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023
Product traceability