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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part No2STR1230
Order Code1749422RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max30V
Continuous Collector Current1.5A
Power Dissipation500mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min330hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for 2STR1230
1 Product Found
Product Overview
The 2STR1230 is a NPN fast-switching Power Transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Surface-mount device in medium power package
- PNP complementary to 2STR2230
Applications
Industrial, Power Management, Consumer Electronics, Computers & Computer Peripherals, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
330hFE
Product Range
-
Collector Emitter Voltage Max
30V
Power Dissipation
500mW
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195