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SKM100GB125DN

IGBT Array & Module Transistor, Dual N Channel, 100 A, 3.3 V, 1.2 kV, Module

SKM100GB125DN - IGBT Array & Module Transistor, Dual N Channel, 100 A, 3.3 V, 1.2 kV, Module

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
SEMIKRON SEMIKRON
Manufacturer Part No:
SKM100GB125DN
Order Code:
2423681
Technical Datasheet:
SKM100GB125DN   Datasheet
See all Technical Docs

Product Overview

The SKM100GB125DN is a 1200V N-channel Ultra Fast IGBT Module with fast and soft inverse CAL diodes. This transistor is ideal for resonant inverters up to 100kHz and Electronic welders as well inductive heating.
  • Low inductance
  • Short tail current with low temperature dependence
  • High short circuit capability
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology
  • Large clearance (10mm) and creepage distances (20mm)

Applications

Power Management, Industrial

Warnings

ESD sensitive device, take proper precaution while handling the device however ESD packaging is not necessary. Due to technical requirements, component may contain dangerous substances.

Product Information

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:
Dual N Channel

:
100A

:
3.3V

:
-

:
1.2kV

:
Module

:
7Pins

:
150°C

:
-

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Technical Docs (1)

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Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.

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More stock available to supplier lead times which is approximately 22/02/21

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£131.00 ( ex VAT  ) £157.2 ( inc VAT )

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