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No Longer Manufactured
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ905D
Order Code1208654
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id16A
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-3
Transistor MountingThrough Hole
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max1.5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The BUZ905D is a P-channel enhancement-mode Power MOSFET offers -160V drain source voltage and -16A continuous drain current.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- Integral protection diode
- BUZ900D complimentary P-channel
- Double die package for maximum power and heat-sink space
Applications
Power Management, Audio, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
16A
Transistor Case Style
TO-3
Rds(on) Test Voltage
-
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
160V
Drain Source On State Resistance
0.75ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0115