Print Page
SH8M11GZETB
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.07 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerROHM
Manufacturer Part NoSH8M11GZETB
Order Code2706782RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOP
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max-
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Alternatives for SH8M11GZETB
1 Product Found
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.07ohm
Transistor Case Style
SOP
Power Dissipation N Channel
2W
Operating Temperature Max
-
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074
Product traceability