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RQ3G100GNTB
Power MOSFET, N Channel, 40 V, 10 A, 0.0143 ohm, HSMT, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.536 |
| 10+ | £0.354 |
| 100+ | £0.253 |
| 500+ | £0.203 |
| 1000+ | £0.200 |
| 5000+ | £0.197 |
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Multiple: 1
£0.54 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoRQ3G100GNTB
Order Code2490611
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id10A
Drain Source On State Resistance0.0143ohm
Transistor Case StyleHSMT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
HSMT
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0143ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005577
Product traceability