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RQ1E070RPFRATR
Power MOSFET, P Channel, 30 V, 7 A, 0.012 ohm, TSMT, Surface Mount
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Product Information
ManufacturerROHM
Manufacturer Part NoRQ1E070RPFRATR
Order Code2706629RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7A
Drain Source On State Resistance0.012ohm
Transistor Case StyleTSMT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
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Product Overview
Notes
This product is available for evaluation and design in. Please contact your local ROHM office when planning to approve this device.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
7A
Transistor Case Style
TSMT
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005577