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EMB3FHAT2R
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 4.7 kohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerROHM
Manufacturer Part NoEMB3FHAT2R
Order Code2769629
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R2-
Transistor Case StyleSOT-563
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation150mW
Operating Temperature Max150°C
DC Current Gain hFE Min100hFE
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (23-Jan-2024)
Product Overview
Notes
This product is available for evaluation and design in. Please contact your local ROHM office when planning to approve this device.
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
4.7kohm
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
150mW
DC Current Gain hFE Min
100hFE
Qualification
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability