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No Longer Manufactured
Product Information
ManufacturerRFMD
Manufacturer Part NoRF3376
Order Code2066360
Technical Datasheet
Frequency Min0Hz
Frequency Max6GHz
Gain19.8dB
Noise Figure Typ2dB
RF IC Case StyleSOT-89
No. of Pins4Pins
Supply Voltage Min-
Supply Voltage Max4.2V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
Automotive Qualification Standard-
Product Overview
The RF3376 is a general purpose RF Amplifier IC designed for use as an easily-cascadable 50Ω gain block. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC-biasing elements to operate as specified.
- Internally matched input and output
- 22dB Small signal gain
- 11dBm Output P1dB
Applications
RF Communications, Consumer Electronics, Power Management
Technical Specifications
Frequency Min
0Hz
Gain
19.8dB
RF IC Case Style
SOT-89
Supply Voltage Min
-
Operating Temperature Min
-40°C
Product Range
-
Frequency Max
6GHz
Noise Figure Typ
2dB
No. of Pins
4Pins
Supply Voltage Max
4.2V
Operating Temperature Max
85°C
Automotive Qualification Standard
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85423390
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005