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RQJ0304DQDQA#H6
Power MOSFET, P Channel, 30 V, 1.8 A, 0.195 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerRENESAS
Manufacturer Part NoRQJ0304DQDQA#H6
Order Code2135178
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.8A
Drain Source On State Resistance0.195ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max-
Power Dissipation800mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (16-Jan-2020)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
800mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jan-2020)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.195ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jan-2020)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000011