Print Page

Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerRENESAS
Manufacturer Part NoRJK0656DPB-00#J5.
Order Code1829604RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0045ohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation65W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
Product Overview
The RJK0656DPB is a N-channel silicon Power MOSFET offers 60V drain source voltage and 40A drain current. It is suitable for use in power switching applications.
- High speed switching
- Low drive current
- Low ON-resistance
- Halogen-free
- High density mounting
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Power Dissipation
65W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00008