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No Longer Stocked
Product Information
ManufacturerRENESAS
Manufacturer Part NoRJK0454DPB
Order Code1829600
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0039ohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation55W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The RJK0454DPB is a N-channel silicon Power MOSFET offers 40V drain source voltage and 40A drain current. It is suitable for use in power switching applications.
- High speed switching
- Low drive current
- Low ON-resistance
- Halogen-free
- High density mounting
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
5Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00008