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SS8050DBU
Bipolar (BJT) Single Transistor, NPN, 25 V, 1.5 A, 1 W, TO-226AA, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoSS8050DBU
Order Code2454122
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Continuous Collector Current1.5A
Power Dissipation1W
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min160hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SS8050DBU
2 Products Found
Product Overview
The SS8050DBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation.
- Complimentary to SS8550
Applications
RF Communications, Portable Devices, Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
160hFE
Product Range
-
Collector Emitter Voltage Max
25V
Power Dissipation
1W
Transistor Mounting
Through Hole
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907