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NVATS5A114PLZT4G
Power MOSFET, P Channel, 60 V, 60 A, 0.016 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVATS5A114PLZT4G
Order Code3616595
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.016ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation72W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (19-Jan-2021)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
72W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1