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NTMS4177PR2G
Power MOSFET, P Channel, 30 V, 11.4 A, 0.01 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 18 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 2500+ | £0.336 |
| 7500+ | £0.330 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
£840.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMS4177PR2G
Order Code2442248
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11.4A
Drain Source On State Resistance0.01ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11.4A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability