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NTBGS2D5N06C
Power MOSFET, N Channel, 60 V, 169 A, 2000 µohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £2.690 |
| 10+ | £2.070 |
| 100+ | £1.850 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBGS2D5N06C
Order Code3677714
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id169A
Drain Source On State Resistance2000µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
169A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
12V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814
Product traceability