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NTB5605PT4G
Power MOSFET, P Channel, 60 V, 18.5 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTB5605PT4G
Order Code2533179RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18.5A
Drain Source On State Resistance0.12ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
5V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability