Print Page
NGTB05N60R2DT4G
IGBT, 16 A, 1.65 V, 56 W, 600 V, TO-252 (DPAK), 3 Pins
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB05N60R2DT4G
Order Code2492865
Technical Datasheet
Continuous Collector Current16A
Collector Emitter Saturation Voltage1.65V
Power Dissipation56W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Continuous Collector Current
16A
Power Dissipation
56W
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.65V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001828