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NGTB03N60R2DT4G
IGBT, 9 A, 1.7 V, 49 W, 600 V, TO-252 (DPAK), 3 Pins
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB03N60R2DT4G
Order Code2492864
Technical Datasheet
Continuous Collector Current9A
Collector Emitter Saturation Voltage1.7V
Power Dissipation49W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Continuous Collector Current
9A
Power Dissipation
49W
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001828
Product traceability