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MJ15011G
Bipolar (BJT) Single Transistor, NPN, 250 V, 10 A, 200 W, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ15011G
Order Code1459083
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max250V
Continuous Collector Current10A
Power Dissipation200W
Transistor Case StyleTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (15-Jan-2018)
Alternatives for MJ15011G
1 Product Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-3
No. of Pins
2Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
250V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.27