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KSD1616AGTA
Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 750 mW, TO-226AA, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSD1616AGTA
Order Code2453964
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current1A
Power Dissipation750mW
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency160MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for KSD1616AGTA
1 Product Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1A
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
Collector Emitter Voltage Max
60V
Power Dissipation
750mW
Transistor Mounting
Through Hole
Transition Frequency
160MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024