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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB33N10LTM
Order Code2454164
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id33A
Drain Source On State Resistance0.039ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation127W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for FQB33N10LTM
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
127W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312
Product traceability