Print Page
FQB10N20
Power MOSFET, N Channel, 200 V, 10 A, 0.36 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB10N20
Order Code9844988
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id10A
Drain Source On State Resistance0.36ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation87W
No. of Pins3Pins
Operating Temperature Max-
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
87W
Operating Temperature Max
-
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002