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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFGB20N60SF
Order Code1885731
Technical Datasheet
Continuous Collector Current20A
Collector Emitter Saturation Voltage2.2V
Power Dissipation208W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
Product Overview
The FGB20N60SF is a high speed novel Field Stop IGBT offers the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
- High current capability
- High input impedance
- 2.2V @ IC = 20A Low saturation voltage
- 8µJ/A Fast switching
Applications
Alternative Energy, Power Management, Maintenance & Repair
Technical Specifications
Continuous Collector Current
20A
Power Dissipation
208W
Transistor Case Style
TO-263 (D2PAK)
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003175