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FDS2582
Power MOSFET, N Channel, 150 V, 4.1 A, 0.066 ohm, SOIC, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS2582
Order Code1076350
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.066ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDS2582
3 Products Found
Product Overview
The FDS2582 is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench® process. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
- Low miller charge
- Low Qrr body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse) formerly developmental type 82855
Applications
Power Management, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000284