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FDMS86202ET120
Power MOSFET, N Channel, 120 V, 102 A, 0.0072 ohm, Power 56, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDMS86202ET120
Order Code3368748RL
Product RangePowerTrench
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £2.860 |
| 500+ | £2.790 |
| 1000+ | £2.710 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
£289.50 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS86202ET120
Order Code3368748RL
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id102A
Drain Source On State Resistance0.0072ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation187W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangePowerTrench
Qualification-
Product Overview
FDMS86202ET120 is a N-channel shielded gate PowerTrench® MOSFET. This N-channel MOSFET is produced using Fairchild Semiconductor’s Advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application includes DC-DC conversion.
- Shielded gate MOSFET Technology
- Advanced package and silicon combination for low rDS(on) and high efficiency
- 100% UIL tested
- 120V drain to source voltage (TA = 25°C), 102A continuous drain current (TC = 25°C)
- 3.1V maximum gate source threshold voltage (VGS=VDS, ID=250μA), 187W power dissipation (TC=25°C)
- 3275pF typical input capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 460pF typical output capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 8.75ns typical rise time (VDD = 60V, ID = 13.5A, VGS = 10V, RGEN = 6ohm)
- 14.3nC gate to source charge typical (ID = 13.5A, VDD = 60V, TJ = 25°C)
- 8 pin power 56 package, operating temperature range from -55 to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
102A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
187W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0072ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
PowerTrench
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability