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FDMD8530
Dual MOSFET, Power Trench, N Channel, 30 V, 30 V, 201 A, 201 A, 770 µohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD8530
Order Code2565204
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel201A
Continuous Drain Current Id P Channel201A
Drain Source On State Resistance N Channel770µohm
Drain Source On State Resistance P Channel770µohm
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation N Channel78W
Power Dissipation P Channel78W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (19-Jan-2021)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
201A
Drain Source On State Resistance P Channel
770µohm
No. of Pins
8Pins
Power Dissipation P Channel
78W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
201A
Drain Source On State Resistance N Channel
770µohm
Transistor Case Style
PQFN
Power Dissipation N Channel
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability