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FDG316P
Power MOSFET, P Channel, 30 V, 1.6 A, 0.19 ohm, SC-70, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG316P
Order Code1708614RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.19ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation750mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDG316P is a P-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount package
- 3.5nC typical low gate charge
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
SC-70
Rds(on) Test Voltage
10V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002