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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8780
Order Code2454153
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0065ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for FDD8780
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Product Overview
The FDD8780 is a N-channel MOSFET produced using Fairchild Semiconductor's proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- Avalanche rated and 100% tested
- Low gate resistance
- 21nC Typical low gate charge
Applications
Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.0065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability