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FDC655BN.
Power MOSFET, N Channel, 30 V, 6.3 A, 0.021 ohm, SuperSOT, Surface Mount
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC655BN.
Order Code2323164
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.3A
Drain Source On State Resistance0.021ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDC655BN.
3 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.3A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
6Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01