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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB045AN08A0
Order Code1471027
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0045ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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3 Products Found
Product Overview
The FDB045AN08A0 is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuit.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Applications
Power Management, Motor Drive & Control, Communications & Networking
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002064