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FDA18N50.
Power MOSFET, N Channel, 500 V, 19 A, 0.265 ohm, TO-3PN, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDA18N50.
Order Code1495295
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id19A
Drain Source On State Resistance0.265ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation239W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Power Dissipation
239W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.265ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01143