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EMC5DXV5T1G
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 4.7 kohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoEMC5DXV5T1G
Order Code2727961
Technical Datasheet
Transistor PolarityNPN and PNP Complement
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R210kohm
Transistor Case StyleSOT-553
No. of Pins5 Pin
Transistor MountingSurface Mount
Power Dissipation500mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN and PNP Complement
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
4.7kohm
Transistor Case Style
SOT-553
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
10kohm
No. of Pins
5 Pin
Power Dissipation
500mW
DC Current Gain hFE Min
80hFE
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000389
Product traceability