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BUV22G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 250 V, 40 A, 250 W, TO-3, Through Hole
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoBUV22G
Order Code1611322
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max250V
Continuous Collector Current40A
Power Dissipation250W
Transistor Case StyleTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency8MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max200°C
Product Range-
Qualification-
Product Overview
The BUV22G is an NPN Silicon Power Transistor designed for high-speed, high-current and high-power applications.
- High DC current gain
- Very fast switching times
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
40A
Transistor Case Style
TO-3
No. of Pins
2Pins
DC Current Gain hFE Min
8hFE
Product Range
-
Collector Emitter Voltage Max
250V
Power Dissipation
250W
Transistor Mounting
Through Hole
Transition Frequency
8MHz
Operating Temperature Max
200°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85331000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001