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BU406TU..
Bipolar (BJT) Single Transistor, NPN, 200 V, 7 A, 60 W, TO-220AB, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBU406TU..
Order Code2453836
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max200V
Continuous Collector Current7A
Power Dissipation60W
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency10MHz
DC Current Gain hFE Min-
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BU406TU..
2 Products Found
Product Overview
The BU406TU is a NPN Epitaxial Silicon Transistor designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power Dissipation.
- High-voltage capability
- High switching speed
- Low saturation voltage
Applications
Multimedia, Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
7A
Transistor Case Style
TO-220AB
No. of Pins
3Pins
DC Current Gain hFE Min
-
Product Range
-
Collector Emitter Voltage Max
200V
Power Dissipation
60W
Transistor Mounting
Through Hole
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0018
Product traceability