Print Page
BCW30LT1G
Bipolar (BJT) Single Transistor, PNP, 32 V, 100 mA, 225 mW, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBCW30LT1G
Order Code2464047
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max32V
Continuous Collector Current100mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min215hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Alternatives for BCW30LT1G
1 Product Found
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
215hFE
Product Range
-
Collector Emitter Voltage Max
32V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001