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BC847BPDW1T3G
Bipolar Transistor Array, NPN, PNP
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC847BPDW1T3G
Order Code2533309RL
Technical Datasheet
Transistor PolarityNPN, PNP
Collector Emitter Voltage Max45V
Continuous Collector Current100mA
Power Dissipation380mW
DC Current Gain hFE Min200hFE
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Transistor Polarity
NPN, PNP
Continuous Collector Current
100mA
DC Current Gain hFE Min
200hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Qualification
AEC-Q101
Collector Emitter Voltage Max
45V
Power Dissipation
380mW
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000016