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BC639RL1G
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 800 mW, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC639RL1G
Order Code2317555
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current1A
Power Dissipation800mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1A
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
800mW
Transistor Mounting
Through Hole
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907