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BC639G
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 800 mW, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC639G
Order Code2317553
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current1A
Power Dissipation800mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BC639G is a NPN silicon high current Transistor, 80VDC collector-emitter voltage and collector-base voltage, 5VDC emitter-base voltage, designed for medium power applications.
- 200°C/W Junction-to-ambient thermal resistance
- 83.3°C/W Junction-to-case thermal resistance
Applications
Industrial, Consumer Electronics
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1A
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
Collector Emitter Voltage Max
80V
Power Dissipation
800mW
Transistor Mounting
Through Hole
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000205