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2SJ652-1E
Power MOSFET, P Channel, 60 V, 28 A, 0.0285 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2SJ652-1E
Order Code2774814
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id28A
Drain Source On State Resistance0.0285ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0285ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002731
Product traceability