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2SC5707-E
Bipolar (BJT) Single Transistor, NPN, 50 V, 8 A, 15 W, TO-251, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2SC5707-E
Order Code2317572
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max50V
Continuous Collector Current8A
Power Dissipation15W
Transistor Case StyleTO-251
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency330MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Product Overview
- 50V, 8A, bipolar transistor
- Adoption of FBET and MBIT processes
- Large current capacitance
- Low collector-to-emitter saturation voltage
- High-speed switching
- High allowable power dissipation
- (PNP)NPN single for high-current switching application
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-251
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
50V
Power Dissipation
15W
Transistor Mounting
Through Hole
Transition Frequency
330MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability