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2N5088BU..
Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 625 mW, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5088BU..
Order Code2453317
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max30V
Continuous Collector Current100mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min300hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The 2N5088BU is a 30V NPN Bipolar (BJT) Single Transistor, designed for low noise, high gain and general purpose amplifier applications at collector currents from 1µA to 50mA. This product is general usage and suitable for many different applications.
- 35V Collector to base voltage (VCBO)
- 4.5V Emitter to base voltage (VEBO)
- 83.3°C/W Thermal resistance, junction to case
- 200°C/W Thermal resistance, junction to ambient
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
100mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
-
Collector Emitter Voltage Max
30V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000204