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SS9018HBU.
Bipolar (BJT) Single Transistor, NPN, 15 V, 50 mA, 400 mW, TO-226AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoSS9018HBU.
Order Code2454127
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Continuous Collector Current50mA
Power Dissipation400mW
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency1.1GHz
DC Current Gain hFE Min97hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SS9018HBU is a NPN Epitaxial Silicon Transistor designed for use as an AM/FM amplifier, local oscillator of FM/VHF tuner applications.
- 1.1GHz High-current gain bandwidth product (fT)
Applications
Power Management, RF Communications, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
50mA
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
97hFE
Product Range
-
Collector Emitter Voltage Max
15V
Power Dissipation
400mW
Transistor Mounting
Through Hole
Transition Frequency
1.1GHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000179