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SGH80N60UFDTU
IGBT, 80 A, 2.6 V, 195 W, 600 V, TO-3P, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoSGH80N60UFDTU
Order Code1057675
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage2.6V
Power Dissipation195W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Alternatives for SGH80N60UFDTU
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Technical Specifications
Continuous Collector Current
80A
Power Dissipation
195W
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.6V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006