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QEB373GR
Infrared Emitter, 875 nm, 12 °, T-3/4 (1.8mm), 16 mW/Sr, 800 ns, 800 ns
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 1000+ | £0.154 |
Price for:Each (Supplied on Full Reel)
Minimum: 1000
Multiple: 1000
£154.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoQEB373GR
Order Code3617612
Technical Datasheet
Peak Wavelength875nm
Angle of Half Intensity12°
Diode Case StyleT-3/4 (1.8mm)
Radiant Intensity (Ie)16mW/Sr
Rise Time800ns
Fall Time tf800ns
Forward Current If(AV)50mA
Forward Voltage VF Max1.7V
Operating Temperature Min-40°C
Operating Temperature Max100°C
Automotive Qualification Standard-
Product Range-
MSLMSL 2 - 1 year
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Peak Wavelength
875nm
Diode Case Style
T-3/4 (1.8mm)
Rise Time
800ns
Forward Current If(AV)
50mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
MSL 2 - 1 year
Angle of Half Intensity
12°
Radiant Intensity (Ie)
16mW/Sr
Fall Time tf
800ns
Forward Voltage VF Max
1.7V
Operating Temperature Max
100°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability