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P2N2222AG
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoP2N2222AG
Order Code1611371
Technical Datasheet
Collector Emitter Voltage Max40V
Continuous Collector Current600mA
Power Dissipation625mW
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min300hFE
Operating Temperature Max150°C
Product Range-
Alternatives for P2N2222AG
3 Products Found
Product Overview
The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Epoxy, Molded Case
- Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
- Notch in Plastic Body Indicates Cathode Lead Polarity
Applications
Signal Processing, Industrial
Technical Specifications
Collector Emitter Voltage Max
40V
Power Dissipation
625mW
Transition Frequency
300MHz
Operating Temperature Max
150°C
Continuous Collector Current
600mA
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003629