Print Page
P2N2222AG
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
Alternatives for P2N2222AG
3 Products Found
Product Overview
The P2N2222AG is a NPN Silicon Bipolar Transistor, designed for use in linear and switching applications.
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Epoxy, Molded Case
- Lead and Mounting Surface Temperature for Soldering Purposes of 260 C Max. for 10 Seconds
- Notch in Plastic Body Indicates Cathode Lead Polarity
Applications
Signal Processing, Industrial
Technical Specifications
Collector Emitter Voltage Max
40V
Power Dissipation
625mW
Transition Frequency
300MHz
Operating Temperature Max
150°C
Continuous Collector Current
600mA
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003629