Print Page
NVTFS5116PLTAG
Power MOSFET, P Channel, 60 V, 6 A, 0.037 ohm, WDFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
4,468 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 50+ | £0.542 |
| 200+ | £0.459 |
| 500+ | £0.380 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
£57.70 (ex VAT)
A £3.50 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVTFS5116PLTAG
Order Code2533214RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id6A
Drain Source On State Resistance0.037ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation3.2W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Product Overview
NVTFS5116PLTAG is a single P-channel, power MOSFET. It has low RDS(on) to minimize conduction losses and low capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0 V, ID = 250µA)
- Gate-to- source leakage current is ±100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 37mohm typical at (VGS = -10V, ID = -7A)
- Input capacitance is 1258pF typical at (VGS = 0V, f = 1MHz, VDS = -25V)
- Total gate charge is 25nC typical at (VGS = -10V, VDS = -48V, ID = -7A)
- Turn-on delay time is 14ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Rise time is 68ns typical at (VGS = -4.5V, VDS = -48V, ID = -7A)
- Operating junction temperature range from -55°C to +175°C
- WDFN8 package
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6A
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Power Dissipation
3.2W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (23-Jan-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NVTFS5116PLTAG
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000072
Product traceability