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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS6H801NT1G
Order Code2895706
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id157A
Drain Source On State Resistance2800µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation166W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
- Single N-Channel Power MOSFET
- Small footprint for compact design
- Low RDS(on) to minimize conduction losses
- Low Qg and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- Enhanced optical inspection
- Applications are switching power supplies, power switches and 48V systems
- Motor control, DC/DC converter, load switch are end products
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
157A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
166W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability