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NVMFS5C442NLAFT1G
Power MOSFET, N Channel, 40 V, 130 A, 2000 µohm, DFN, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £0.915 |
| 500+ | £0.733 |
| 1000+ | £0.679 |
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Minimum: 100
Multiple: 5
£95.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS5C442NLAFT1G
Order Code3368867RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id130A
Drain Source On State Resistance2000µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation83W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
130A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
5Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability